features high voltage maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 80 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current -continuous 1 a p c collector dissipation 0.5 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =1ma,i e =0 80 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 5 v collector cut-off current i cbo v cb =50v,i e =0 0.1 a emitter cut-off current i ebo v eb =4v,i c =0 0.1 a h fe(1) v ce =2v,i c =0.05a 100 320 dc current gain h fe(2) v ce =2v,i c =1a 30 collector-emitter saturation voltage v ce(sat) i c =500ma,i b =50ma 0.5 v base-emitter saturation voltage v be(sat) i c =500ma,i b =50ma 1.2 v transition frequency f t v ce =10v,i c =50ma 150 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 12 pf classification of h fe(1) rank y gr range 100-200 160-320 marking ty tgr sot-89 1. base 2. collector 3. emitter 1 2 3 KTC4378 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics KTC4378 2 date:2011/05 www.htsemi.com semiconductor jinyu
KTC4378 3 date:2011/05 www.htsemi.com semiconductor jinyu
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